Аннотация
A model simulating the magnetron sputtering process of array targets is suggested. This model al- lows to predict the ultimate composition of the deposited films when extensive or axial magnetron sputtering systems (MSS) are used to process array targets with arbitrary positions of the insertion blocks. The model is based on integration of the sputtered flow from each point of the sputtering area, and takes into consideration the sputtering yield and electron-ion emission ratio of both base and insertions. The discharge current-density distribution curve can be approximated using the third central moment in the “binary Gaussian”-type of dis- tribution, thus allowing the use of actual parameters of the sputtering area and magnetron discharge current. Also it provides a sufficient accuracy in mathematical description of the ion current density distribution. In order to verify the suggested model experimental deposition of thin films was performed by means of mag- netron sputtering of Ti/Zr and Ti/Zr/Pb array targets. The analysis of simulation data showed that the model error does not exceed 10.0%.